Reduction of low-frequency noise in Si MOSFETs by using nanowire channel

K. Ohmori*, W. Feng, R. Hettiarachchi, Y. Lee, S. Sato, K. Kakushima, M. Sato, K. Fukuda, M. Niwa, K. Yamabe, K. Shiraishi, H. Iwai, K. Yamada

*Corresponding author for this work

研究成果: Conference contribution同行評審

1 引文 斯高帕斯(Scopus)

摘要

We have investigated the noise spectral density of nanowire and planar FETs. It was experimentally found that the nanowire FET shows lower noise density than the planar FET. By a simulation using Poisson-Schrödinger equations, the distribution of inversion carriers in the nanowire channel is located further from the interface due to quantum confinement, which well explains the observed lower noise density of nanowire FET.

原文English
主出版物標題ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
DOIs
出版狀態Published - 2012
事件2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012 - Xi'an, China
持續時間: 29 十月 20121 十一月 2012

出版系列

名字ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Conference

Conference2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012
國家China
城市Xi'an
期間29/10/121/11/12

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