Reduction of leakage current in metal-induced lateral crystallization polysilicon TFTs with dual-gate and multiple nanowire channels

Yung Chun Wu, Ting Chang Chang, Po-Tsun Liu, Cheng Wei Chou, Yuan Chun Wu, Chun Hao Tu, Chun Yen Chang

研究成果: Article同行評審

11 引文 斯高帕斯(Scopus)

摘要

This letter addresses the leakage current in nickel (Ni) metal-induced lateral crystallization (Ni-MILC) polysilicon thin-film transistors (poly-Si TFTs) with multiple ninowire channels and dual-gate. Experimental results reveal that applying multiple nanowire channels improves the Ni-MILC poly-Si TFT performance. However, the leakage current of both single-gate with single-channel and multiple nanowire channels remains high (>10-8 A), because of the field emission of carrier, through the poly-Si grain traps and the defects caused by Ni contamination. Applying the dual-gate structure can suppress the f lectrical filed in the drain depletion region, significantly reducing the leakage current of the Ni-MILC poly-Si TFT, increasing the ON/OFF ratio.

原文English
頁(從 - 到)646-648
頁數3
期刊IEEE Electron Device Letters
26
發行號9
DOIs
出版狀態Published - 1 九月 2005

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