Reduction of discrete-dopant-induced high-frequency characteristic fluctuations in nanoscale CMOS circuit

Yiming Li*, Chih Hong Hwang, Ta Ching Yeh, Hsuan Ming Huang, Tien Yeh Li, Hui Wen Cheng

*Corresponding author for this work

研究成果: Paper同行評審

3 引文 斯高帕斯(Scopus)

摘要

As the dimension of semiconductor device shrunk into nanoscale, characteristic fluctuation is more pronounced, and become crucial for circuit design. Diverse approaches have been reported to investigate and suppress the random-dopant-induced fluctuations in devices. However, attention is seldom drawn to the existence of high-frequency characteristic fluctuations of active device. In this paper, intrinsic high-frequency characteristic fluctuations of the nanoscale MOSFET circuit induced by random dopants are intensively explored using an experimentally validated simulation methodology, where fluctuation suppression technique is further examined. The circuit gain, the 3db bandwidth and the unity-gain bandwidth of the tested circuit are estimated concurrently capturing the discrete-dopant-number-and discrete-dopant-position-induced fluctuations. This study provides an insight into discrete-dopant-induced intrinsic high-frequency characteristic fluctuations and examines the potential fluctuation suppression technique for nanoscale transistor circuit.

原文English
頁面209-212
頁數4
DOIs
出版狀態Published - 2008
事件2008 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2008 - Hakone, Japan
持續時間: 9 九月 200811 九月 2008

Conference

Conference2008 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2008
國家Japan
城市Hakone
期間9/09/0811/09/08

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