Reduction of boron penetration for a p+ polycide gate by using cobalt silicides as a boron diffusion source

M. H. Juang*, Huang-Chung Cheng, W. K. Lai, C. J. Yang

*Corresponding author for this work

研究成果: Article

1 引文 斯高帕斯(Scopus)

摘要

A scheme for forming a p+ polycide gate is described, by using BF2 implantation into CoSi/ poly-Si bilayer films and subsequent annealing. Instead of the conventional BF2 implantation into thin poly-Si films, this scheme employs the CoSi layer as an implant barrier as well as a boron diffusion source to retard the boron diffusion. The improved gate oxide integrity and the reduced flat-band voltage shift can be obtained without causing other side effects. In addition, it is found that the stack layer of CoSi/a-Si can serve as an excellent implant barrier for suppressing the boron penetration through a gate oxide.

原文English
頁(從 - 到)389-392
頁數4
期刊Solid-State Electronics
42
發行號3
DOIs
出版狀態Published - 30 三月 1998

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