Reducing threshold voltage shifts in amorphous silicon thin film transistors by hydrogenating the gate nitride prior to amorphous silicon deposition

Jun Wei Tsai*, Chun Yao Huang, Ya-Hsiang Tai, Huang-Chung Cheng, Feng Cheng Su, Fang Chen Luo, Hsing Chien Tuan

*Corresponding author for this work

研究成果: Article同行評審

18 引文 斯高帕斯(Scopus)

摘要

A short H 2 plasma treatment of the gate SiN x before depositing amorphous silicon (a-Si:H) is found to significantly decrease the threshold shifts in the bias stress, inverted a-Si:H thin film transistors (TFTs). The reduced threshold voltage shift is attributed to a plasma induced reconstruction of SiN x precursors leading to the removal of the weak bonds. A prolonged plasma treatment, however, degraded the TFT characteristics; this was traced H 2 plasma damage which eventually generated a rough a-Si:H/SiN x interface.

原文English
頁(從 - 到)1237-1239
頁數3
期刊Applied Physics Letters
71
發行號9
DOIs
出版狀態Published - 1 九月 1997

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