Reducing Ni residues of metal induced crystallization poly-Si with a simple chemical oxide layer

Ming Hui Lai*, Yew-Chuhg Wu

*Corresponding author for this work

研究成果: Conference contribution同行評審

摘要

The high leakage current is the most important issue of MIC-TFT. Ni residues in the MIC-TFT is the major cause of the leakage. In this study, a chemical oxide layer was used to avoid excess of Ni atoms into a-Si layer during MIC process. The process is simple and without extra thermal annealing. It was found that the Ni concentration of poly-Si film with chemical oxide layer was much less than that of conventional MIC poly-Si film. As a result, the leakage current was improved.

原文English
主出版物標題Thin Film Transistors 10, TFT 10
頁面157-159
頁數3
版本5
DOIs
出版狀態Published - 1 十二月 2010
事件10th Symposium on Thin Film Transistor Technologies, TFT 10 - 218th ECS Meeting - Las Vegas, NV, United States
持續時間: 11 十月 201015 十月 2010

出版系列

名字ECS Transactions
號碼5
33
ISSN(列印)1938-5862
ISSN(電子)1938-6737

Conference

Conference10th Symposium on Thin Film Transistor Technologies, TFT 10 - 218th ECS Meeting
國家United States
城市Las Vegas, NV
期間11/10/1015/10/10

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