Reduced Reverse Narrow Channel Effect in Thin SOI nMOSFETs

Chun Yen Chang, Sun Jay Chang, Tien-Sheng Chao, Sung Dtr Wu, Tiao Yuan Huang

研究成果: Article同行評審

9 引文 斯高帕斯(Scopus)

摘要

The effects of narrow channel width on the threshold voltage of deep submicron silicon-on-insulator (SOI) nMOSFETs with LOCOS isolation have been investigated. The reverse narrow channel effect (RNCE) in SOI devices is found to be dependent on the thickness of the active silicon film. A thinner silicon film is found to depict less threshold voltage fall-off. These results can be explained by a reduced oxide/silicon interface area in the transistor width direction, thus the boron segregation due to silicon interstitials with high recombination rate is reduced.

原文English
頁(從 - 到)460-462
頁數3
期刊IEEE Electron Device Letters
21
發行號9
DOIs
出版狀態Published - 1 九月 2000

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