Recent advances in GaN power switching devices

Satoshi Tamura*, Yoshiharu Anda, Masahiro Ishida, Yasuhiro Uemoto, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda

*Corresponding author for this work

研究成果: Conference contribution同行評審

22 引文 斯高帕斯(Scopus)

摘要

Recent advances in GaN power switching devices are reviewed. A new normall-off GaN transistor called Gate Injection Transistor (GIT) increases drain current by conductivity modulation. The GIT is fabricated on cost-effective Si substrates by novel MOCVD technology enabling crack-free and smooth surfaces over 6-inch wafer. These technologies with thermally stable device isolation by Fe ion implantation are applied for a monolithic inverter IC. This is the world fist demonstration of a GaN inverter IC for motor drive, which reduces the total operating loss by 42% from that by the IGBT-based inverter. These technologies are indispensable for wide-spread use of GaN power switching transistors in the future.

原文English
主出版物標題2010 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2010 - Technical Digest 2010
DOIs
出版狀態Published - 20 十二月 2010
事件2010 32nd IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2010 - Monterey, CA, United States
持續時間: 3 十月 20106 十月 2010

出版系列

名字Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC
ISSN(列印)1550-8781

Conference

Conference2010 32nd IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2010
國家United States
城市Monterey, CA
期間3/10/106/10/10

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