Recent advances and future trends of ULSI technologies

Hiroshi Iwai*

*Corresponding author for this work

研究成果: Conference contribution同行評審

5 引文 斯高帕斯(Scopus)

摘要

In recent few years, significant progress has been seen in the study of 0.1 and sub-0.1 micron gate length MOSFETs. In this paper, recent advance in the small-geometry MOSFETs is described and the limit of MOSFET downsizing is predicted. Then, a concept of future ULSI in 2010's is discussed.

原文English
主出版物標題ESSDERC 1996 - Proceedings of the 26th European Solid State Device Research Conference
編輯Massimo Rudan, Giorgio Baccarani
發行者IEEE Computer Society
頁面45-52
頁數8
ISBN(電子)286332196X
ISBN(列印)9782863321966
出版狀態Published - 1996
事件26th European Solid State Device Research Conference, ESSDERC 1996 - Bologna, Italy
持續時間: 9 九月 199611 九月 1996

出版系列

名字European Solid-State Device Research Conference
ISSN(列印)1930-8876

Conference

Conference26th European Solid State Device Research Conference, ESSDERC 1996
國家Italy
城市Bologna
期間9/09/9611/09/96

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