Random work functions induced DC and dynamic characteristic fluctuations in 16-nm high-κ/metal gate CMOS device and digital circuit

Hui Wen Cheng, Yiming Li*

*Corresponding author for this work

研究成果: Conference contribution同行評審

3 引文 斯高帕斯(Scopus)

摘要

We study nanosized metal grains induced DC and timing fluctuations in 16 nm high-κ/metal gate (HKMG) MOSFET devices. A localized work function fluctuation (LWKF) on device's DC/AC and CMOS inverter's characteristics is advanced using an experimentally validated 3D device simulation which cannot be well modeled using an averaged WKF (AWKF) method. DC characteristics estimated by the LWKF method are 1.5 and 1.6 times larger than that by the AWKF method for N- and P-MOSFETs, respectively, due to random grain number and position effects. The delay time of high-to-low and low-to-high of the CMOS inverter calculated by the AWKF method are underestimated by 1.29 and 1.19 times, compared with the LWKF method.

原文English
主出版物標題Proceedings of the 3rd Asia Symposium on Quality Electronic Design, ASQED 2011
頁面203-206
頁數4
DOIs
出版狀態Published - 2011
事件3rd Asia Symposium on Quality Electronic Design, ASQED 2011 - Kuala Lumpur, Malaysia
持續時間: 19 七月 201120 七月 2011

出版系列

名字Proceedings of the 3rd Asia Symposium on Quality Electronic Design, ASQED 2011

Conference

Conference3rd Asia Symposium on Quality Electronic Design, ASQED 2011
國家Malaysia
城市Kuala Lumpur
期間19/07/1120/07/11

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