Random dopant induced fluctuations of characteristics in deep sub-micron MOSFETs

Hung Mu Chou, Shih Ching Lo, Jyun Hwei Tsai, Yiming Li*

*Corresponding author for this work

研究成果: Conference contribution同行評審

摘要

As the gate length of MOSFET devices shrinks down below 100 nm, the fluctuation of major devices parameter, namely, threshold voltage (V TH), subthreshold swing, drain current (ID) and subthreshold leakage current due to influences of processes variations becomes a serious problem. Random dopant fluctuation is one of the problems. In this work, we theoretically examine the fluctuation effects of random dopant on the threshold voltage and drain current variation in single-gate (MOSFET), SOI and double-gate MOSFETs. In the numerical simulation of the threshold voltage variation, the drift-diffusion and density gradient models are considered to describe transport phenomena with quantum effects of devices. Random dopant induces drain current and threshold voltage lowering. The reduction becomes larger with channel length is scaling down. From the results, VTH can be controlled by thin channel DG-MOSFET and SOI devices. However, thin channel may reduce ID. Thus, structure of devices needed to be optimized. The fluctuation of device characteristics caused by random dopant cannot be neglected. From the fabrication point of view, we concluded that the random dopant fluctuation of device characteristics could be controlled in the design of SOI and DG-MOSFET.

原文English
主出版物標題2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005 Technical Proceedings
編輯M. Laudon, B. Romanowicz
頁面80-83
頁數4
出版狀態Published - 2005
事件2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005 - Anaheim, CA, United States
持續時間: 8 五月 200512 五月 2005

出版系列

名字2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005 Technical Proceedings

Conference

Conference2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005
國家United States
城市Anaheim, CA
期間8/05/0512/05/05

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