Radio-frequency silicon-on-insulator modeling considering the neutral-body effect

Sheng Chun Wang*, Pin Su, Kun Ming Chen, Chien Ting Lin, Victor Liang, Guo Wei Huang

*Corresponding author for this work

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

This paper presents small-signal modeling for state-of-the-art radio-frequency (RF) silicon-on-insulator (SOI) metal-oxide-semiconductor field effect transistors (MOSFETs). Especially, we have incorporated the neutral-body effect in our RF SOI model. This effect is significant in both RF extrinsic and intrinsic modeling stages. In addition, we have developed a physically-accurate parameter extraction method based on our analytical expressions. Our modeling results agree well with the measured data and can capture the frequency dependences of both output conductance and capacitance in the GHz frequency region. The anomalous S22 and S21 behaviors as well as the output conductance rising effect observed in our measurements can be predicted and described using the proposed model.

原文English
頁(從 - 到)2087-2091
頁數5
期刊Japanese journal of applied physics
47
發行號4 PART 1
DOIs
出版狀態Published - 18 四月 2008

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