@inproceedings{6606896d15244e088f83be7b523f32bd,
title = "Radiation-Harden RISC Processor for Micro-Satellites in Standard CMOS",
abstract = "An integrated design framework is proposed to automate radiation-harden (rad-hard) VLSI systems in a standard CMOS technology. TMR, DICE, SERL, ELT, and ECC techniques are integrated across architecture, circuit, and layout levels. Performance of the rad-hard cells were evaluated in 0.18m CMOS. A rad-hard RISC processor targeting for an inclination micro-satellite on a 720km orbit was realized in 90nm CMOS. The chip was tested by applying heavy ions with corresponding radiation dose. The rad-hard RISC processor functions under all the test conditions (LET \lt 101.5 MeV-cm {2} / mg), validating the effectiveness of the methodology. ",
author = "Her-Ming Chiueh and Yang, {Chia Hsiang} and Wen, {Charles H.P.} and Yang, {Chao Guang} and Chien, {Po Hao} and Hung, {Ching Yang} and Chen, {Yu Jui} and Wang, {Yao Pin} and Chiu, {Chin Fong} and Jer Lin",
note = "Publisher Copyright: {\textcopyright} 2020 IEEE. Copyright: Copyright 2020 Elsevier B.V., All rights reserved.; null ; Conference date: 10-08-2020 Through 13-08-2020",
year = "2020",
month = aug,
doi = "10.1109/VLSI-DAT49148.2020.9196348",
language = "English",
series = "2020 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2020",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2020 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2020",
address = "United States",
}