Properties of Pt/SrBi 2 Ta 2 O 9 /BL/Si MFIS structures containing HfO 2 , SiO 2 , and Si 3 N 4 buffer layers

Ching Chich Leu*, Chia Feng Leu, Chao-Hsin Chien, Ming Jui Yang, Rui Hao Huang, Chen Han Lin, Fan Yi Hsu

*Corresponding author for this work

研究成果: Article同行評審

6 引文 斯高帕斯(Scopus)

摘要

The physical and electrical properties of Pt SrBi2 Ta2 O9 (SBT)/buffer layer (BL)/Si metal/ferroelectric/insulator/semiconductor (MFIS) structures incorporating HfO2, SiO2, and Si 3 N 4 as buffer layers were investigated. When employing HfO2 as the buffer layer, an MFIS structure exhibiting a high memory ratio was constructed, presumably because of the SBT characteristics and the high quality of the HfO2 layer on the Si substrate. This study demonstrates that HfO2 is one of the best buffer-layer materials for ferroelectric memory applications.

原文English
頁(從 - 到)25-28
頁數4
期刊Electrochemical and Solid-State Letters
10
發行號5
DOIs
出版狀態Published - 23 三月 2007

指紋 深入研究「Properties of Pt/SrBi <sub>2</sub> Ta <sub>2</sub> O <sub>9</sub> /BL/Si MFIS structures containing HfO <sub>2</sub> , SiO <sub>2</sub> , and Si <sub>3</sub> N <sub>4</sub> buffer layers」主題。共同形成了獨特的指紋。

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