Properties of highly resistive and nonstoichiometric GaAs film grown by low-temperature metalorganic chemical vapor deposition using tertiarybutylarsine

Wen Chung Chen, C. S. Chang*, Wei-Kuo Chen

*Corresponding author for this work

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

The properties of highly resistive and nonstoichiometric GaAs films grown by metalorganic chemical vapor deposition (MOCVD) at low temperature (LT) are studied by transmission electron microscopy (TEM), photo-luminescence (PL), deep level transient spectroscopy, and double crystal X-ray and X-ray photoelectron spectroscopy. GaAs films are grown with source precursors of triethylgallium (TEGa) and tertiarybutylarsine (TBAs) at substrate temperatures of 425-550°C. The microstructure observed in the MOCVD GaAs film shows better film quality as the input V/III molar flow ratios increase. Furthermore, the growth rate and the shift of binding energy for the As 3d core level of the film are slightly increased with increasing V/III ratio, but the intensity of VAs-related emission in PL is decreased. We suggest that the high resistivity of the LT-MOCVD film is due to structural defects caused by the nonstoichiometry of excess As atoms in the film.

原文English
頁(從 - 到)3649-3654
頁數6
期刊Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
36
發行號6 A
DOIs
出版狀態Published - 1 六月 1997

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