Promising composite die-bonding materials for high-power GaN-based LED applications

Ray-Hua Horng*, Jhih Sin Hong, Yu Li Tsai, Chia Ju Chen, Chih Ming Chen, Dong Sing Wuu

*Corresponding author for this work

研究成果: Conference contribution同行評審

1 引文 斯高帕斯(Scopus)


In this paper we propose a promising die-bonding material consisted of diamond-added AgSnCu solders for chip package, and combine it with our well-established cup-shaped copper technique for chip heat dissipation. The composite solder was prepared by mixing the commercial Sn-3wt.%Ag- 0.5wt.%Cu (SAC305) solder paste with the diamond paste [0.25(W)475-MA, Engis, USA] in a weight ratio of 10:1. Thermal resistance analysis shows that total thermal resistance of the LED packaged using the composite solder is only 6.4 K/W, which is much lower than both the LED using AgSnCu solder (9.2 K/W) and the LED using silver paste (10.4 K/W). As a result, the LED with the composite solder exhibits larger light output power and smaller junction temperature than the other two samples. The improved device performance is mainly due to enhanced heat dissipation of the die-bonding materials used. These results suggest that the composite diamond-added AgSnCu solder is promising in high-power LED application.

主出版物標題Gallium Nitride Materials and Devices V
出版狀態Published - 7 五月 2010
事件Gallium Nitride Materials and Devices V - San Francisco, CA, United States
持續時間: 25 一月 201028 一月 2010


名字Proceedings of SPIE - The International Society for Optical Engineering


ConferenceGallium Nitride Materials and Devices V
國家United States
城市San Francisco, CA

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