Projecting Gate Oxide Reliability and Optimizing Reliability Screens

Reza Moazzami, Chen-Ming Hu

研究成果: Article

79 引文 斯高帕斯(Scopus)

摘要

The effect of time-dependent stress voltage and temperature on the reliability of thin SiO, films is incorporated in a quantitative defect-induced breakdown model. Based on this model, design curves are presented which can be used along with a breakdown voltage distribution for an oxide technology to determine optimal burn-in conditions. The tradeoff between improved reliability and lower burn-in yield for different gate oxide technologies can also he examined quantitatively using the model presented here.

原文English
頁(從 - 到)1643-1650
頁數8
期刊IEEE Transactions on Electron Devices
37
發行號7
DOIs
出版狀態Published - 1 一月 1990

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