Process-related reliability issues toward sub-100 nm device regime

研究成果: Conference contribution同行評審

摘要

Crucial process-related reliability issues, such as boron penetration, plasma charging damage, metal-gate processing, and emerging high-k dielectric, toward sub-100 nm technology nodes have been discussed.

原文English
主出版物標題2002 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings
發行者IEEE Computer Society
頁面133-140
頁數8
ISBN(列印)0780372352, 9780780372351
DOIs
出版狀態Published - 1 一月 2002
事件2002 23rd International Conference on Microelectronics, MIEL 2002 - Nis, Serbia
持續時間: 12 五月 200215 五月 2002

出版系列

名字2002 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings
1

Conference

Conference2002 23rd International Conference on Microelectronics, MIEL 2002
國家Serbia
城市Nis
期間12/05/0215/05/02

指紋 深入研究「Process-related reliability issues toward sub-100 nm device regime」主題。共同形成了獨特的指紋。

引用此