Pressure-induced phase transitions in inas studied by angular-dispersive X-ray diffraction and Raman spectroscopy

Chih Ming Lin*, Kung Liang Lin, Yu Ker Chern, Yu Kun Lin, Yu Chun Chuang, Yen Fa Liao, Yuen Wuu Suen, Sheng Rui Jian, Jenh-Yih Juang

*Corresponding author for this work

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)


Pressure-induced phase transitions in indium arsenide (InAs) at ambient temperature were investigated by using angular-dispersive X-ray diffraction (ADXRD) and Raman scattering under high pressure up to around 9.8(1) and 9.9(2) GPa, respectively, with a 4:1 (in volume ratio) methanol-ethanol mixture as the pressure transmitting medium (PTM). In situ ADXRD measurements revealed that InAs starts to transform from zinc blende (ZB) structure to rock-salt (RS) phase at 6.7(1) GPa, consistent with most previously reported studies. The phase transition proceeds steadily over a wide range of pressures and reaches completion at the highest applied pressure of 9.8 GPa with significant metallization, as suggested by the disappearance of Raman modes. In contrast to previous studies, our data did not show evidence of structural transition to Cmcm phase, presumably due to the different PTMs used and/or insufficient pressure applied. The order of appearance of the major diffraction peaks of RS phase InAs with increasing pressure and intensity are explained by the binding energy density of the corresponding plane families. The zero-pressure isothermal bulk moduli (B0) and its first-pressure derivatives (B'0) for the ZB InAs are 64(4) GPa and 3.8(2), respectively. The intensity of both the LO and TO phonon modes of ZB phase InAs exhibits an abrupt decrease at 7.7(1) GPa, where equal weight fractions of ZB and RS phases are identified, suggesting the metallic nature of the RS phase. Copyright.

頁(從 - 到)1039-1044
期刊Science of Advanced Materials
出版狀態Published - 1 一月 2015

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