Power conditioning applications of 700V GaN-HEMTs cascode switch

Stone Cheng*, Po Chien Chou

*Corresponding author for this work

研究成果: Conference contribution同行評審

3 引文 斯高帕斯(Scopus)

摘要

A hybrid cascoded GaN switch configuration is demonstrated in power conversion applications. A novel metal package is proposed for the packaging of a D-mode GaN metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT) cascoded with an integrated power MOSFET and a Schottky barrier diode. The normally-off cascode circuit provides a maximum drain current of 14.6 A and a blocking capability of 700 V. Analysis of 200 V/ 1 A power conversion characteristics are discussed and show the excellent switching performance in load circuits. Switching characteristics of the integral SiC Schottky barrier diode are also demonstrated. Finally, a flyback AC-DC converter is used to evaluate the benefit of GaN cascode switches. These results show that high-voltage GaN-HEMTs can be switching devices for an ultralow-loss converter circuit.

原文English
主出版物標題IECON 2015 - 41st Annual Conference of the IEEE Industrial Electronics Society
發行者Institute of Electrical and Electronics Engineers Inc.
頁面4796-4801
頁數6
ISBN(電子)9781479917624
DOIs
出版狀態Published - 1 一月 2015
事件41st Annual Conference of the IEEE Industrial Electronics Society, IECON 2015 - Yokohama, Japan
持續時間: 9 十一月 201512 十一月 2015

出版系列

名字IECON 2015 - 41st Annual Conference of the IEEE Industrial Electronics Society

Conference

Conference41st Annual Conference of the IEEE Industrial Electronics Society, IECON 2015
國家Japan
城市Yokohama
期間9/11/1512/11/15

指紋 深入研究「Power conditioning applications of 700V GaN-HEMTs cascode switch」主題。共同形成了獨特的指紋。

引用此