Post-soft-breakdown characteristics of deep submicron NMOSFETs with ultrathin gate oxide

Min Yu Tsai, Horng-Chih Lin*, Da Yuan Lee, Tiao Yuan Huang

*Corresponding author for this work

研究成果: Article同行評審

14 引文 斯高帕斯(Scopus)

摘要

The impacts of soft-breakdown (SBD) on the characteristics of deep sub-micron NMOSFETs were investigated. It is shown that the BD location plays a crucial role in the post-BD switching function of the device. When BD occurs at the channel, the turn-on behavior of the drain current would not be significantly affected, which is in strong contrast to the case of BD at the drain. Nevertheless, significant increase in gate current is observed in the off-state when the gate voltage is more negative than -1 V. Its origin is identified to be due to the action of two parasitic bipolar transistors formed after SBD occurrence at the channel.

原文English
頁(從 - 到)348-350
頁數3
期刊IEEE Electron Device Letters
22
發行號7
DOIs
出版狀態Published - 1 七月 2001

指紋 深入研究「Post-soft-breakdown characteristics of deep submicron NMOSFETs with ultrathin gate oxide」主題。共同形成了獨特的指紋。

引用此