Poly-Si thin-film transistor nonvolatile memory using Ge nanocrystals as a charge trapping layer deposited by the low-pressure chemical vapor deposition

Po Yi Kuo*, Tien-Sheng Chao, Jyun Siang Huang, Tan Fu Lei

*Corresponding author for this work

研究成果: Article同行評審

6 引文 斯高帕斯(Scopus)

摘要

We have successfully developed and fabricated a poly-Si thin-film transistor (poly-Si TFT) nonvolatile memory using Ge nanocrystals (Ge-NCs) as a charge trapping layer. Process compatibility and memory operation of the device were investigated. The Ge-NC trapping layer was directly deposited by low-pressure chemical vapor deposition at 370 °C. Results show that the new poly-Si TFT nonvolatile Ge-NC memory has good programming/erasing efficiency, long charge retention time, and good endurance characteristics. These results show that poly-Si TFT nonvolatile Ge-NC memory is the promising nonvolatile memory candidate for system-on-panel application in the future.

原文English
頁(從 - 到)234-236
頁數3
期刊IEEE Electron Device Letters
30
發行號3
DOIs
出版狀態Published - 12 二月 2009

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