Polarization field in barrier-doped InGaN/AlInGaN multiple quantum wells

T. M. Hsu*, C. Y. Lai, Wen-Hao Chang, C. C. Pan, C. C. Chuo, J. I. Chyi

*Corresponding author for this work

研究成果: Conference article同行評審

指紋 深入研究「Polarization field in barrier-doped InGaN/AlInGaN multiple quantum wells」主題。共同形成了獨特的指紋。

Chemical Compounds

Engineering & Materials Science

Physics & Astronomy