Polarization field in barrier-doped InGaN/AlInGaN multiple quantum wells

T. M. Hsu*, C. Y. Lai, Wen-Hao Chang, C. C. Pan, C. C. Chuo, J. I. Chyi

*Corresponding author for this work

研究成果: Conference article同行評審

摘要

The polarization field of barrier-doped In0.06Ga 0.94N/Al0.1In0.02Ga0.88N multiple quantum well in the p-i-n diode structures was measured by electroreflectance. The bias dependent electroreflectance spectra displayed an intensity minimum and an 180° phase change at the flat-band voltage. The polarization field in QW was calculated by the self-consistence calculations of Poisson equation. It is found that the polarization field is 0.21 M V/cm, and independent of barrier doping.

原文English
頁(從 - 到)545-547
頁數3
期刊Conference Proceedings - International Conference on Indium Phosphide and Related Materials
DOIs
出版狀態Published - 31 五月 2004
事件2004 International Conference on Indium Phosphide and Related Materials, 16th IPRM - Kagoshima, Japan
持續時間: 31 五月 20044 六月 2004

指紋 深入研究「Polarization field in barrier-doped InGaN/AlInGaN multiple quantum wells」主題。共同形成了獨特的指紋。

引用此