The polarization field of barrier-doped In0.06Ga 0.94N/Al0.1In0.02Ga0.88N multiple quantum well in the p-i-n diode structures was measured by electroreflectance. The bias dependent electroreflectance spectra displayed an intensity minimum and an 180° phase change at the flat-band voltage. The polarization field in QW was calculated by the self-consistence calculations of Poisson equation. It is found that the polarization field is 0.21 M V/cm, and independent of barrier doping.
|頁（從 - 到）||545-547|
|期刊||Conference Proceedings - International Conference on Indium Phosphide and Related Materials|
|出版狀態||Published - 31 五月 2004|
|事件||2004 International Conference on Indium Phosphide and Related Materials, 16th IPRM - Kagoshima, Japan|
持續時間: 31 五月 2004 → 4 六月 2004