Point contact reactions between Ni and Si nanowires and reactive epitaxial growth of axial nano-NiSi/Si

Kuo Chang Lu*, King-Ning Tu, Wen-Wei Wu, L. J. Chen, Bong Young Yoo, Nosang V. Myung

*Corresponding author for this work

研究成果: Article同行評審

56 引文 斯高帕斯(Scopus)

摘要

Point contact reactions between a Si nanowire and a Ni nanowire are reported in which the Si nanowire is transformed into a single crystal NiSi with an epitaxial interface which has no misfit dislocation. The reactions were carried out in situ in an ultrahigh vacuum transmission electron microscope. The growth of the NiSi occurs by the dissolution of Ni into the Si nanowire and by interstitial diffusion from, the point of contact to the epitaxial interface. The point contact reactions have enabled the authors to fabricate single crystal NiSi/Si/NiSi heterostructures of atomically sharp interfaces for nanoscale devices.

原文English
文章編號253111
期刊Applied Physics Letters
90
發行號25
DOIs
出版狀態Published - 2 八月 2007

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