Plasma charging induced gate oxide damage during metal etching and ashing

Horng-Chih Lin*, C. H. Perng, Chao-Hsin Chien, S. G. Chiou, T. F. Chang, T. Y. Huang, C. Y. Chang

*Corresponding author for this work

研究成果: Paper同行評審

1 引文 斯高帕斯(Scopus)

摘要

Gate oxide damage induced by plasma charging during metal etching with MERIE or helicon wave etcher and subsequent resist ashing was investigated. It was found that serious damage would occur during the MERIE processing, while good results were obtained with helicon wave etcher. It was also observed that the antenna effect can be clearly illustrated by measuring the gate current.

原文English
頁面113-116
頁數4
出版狀態Published - 1 一月 1996
事件Proceedings of the 1996 1st International Symposium on Plasma Process-Induced Damage, P2ID - Santa Clara, CA, USA
持續時間: 13 五月 199614 五月 1996

Conference

ConferenceProceedings of the 1996 1st International Symposium on Plasma Process-Induced Damage, P2ID
城市Santa Clara, CA, USA
期間13/05/9614/05/96

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