Piezoelectricity-induced schottky barrier height variations in AlGaN/GaN high electron mobility transistors

Kaiyuan Yao, Sourabh Khandelwal, Firas Sammoura, Atsushi Kazama, Chen-Ming Hu, Liwei Lin

研究成果: Article同行評審

18 引文 斯高帕斯(Scopus)

指紋 深入研究「Piezoelectricity-induced schottky barrier height variations in AlGaN/GaN high electron mobility transistors」主題。共同形成了獨特的指紋。

Chemical Compounds

Engineering & Materials Science