Piezoelectricity-induced schottky barrier height variations in AlGaN/GaN high electron mobility transistors

Kaiyuan Yao, Sourabh Khandelwal, Firas Sammoura, Atsushi Kazama, Chen-Ming Hu, Liwei Lin

研究成果: Article › 同行評審

18 引文 斯高帕斯（Scopus）

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Chemical Compounds

Engineering & Materials Science