Piezoelectricity-induced schottky barrier height variations in AlGaN/GaN high electron mobility transistors

Kaiyuan Yao, Sourabh Khandelwal, Firas Sammoura, Atsushi Kazama, Chen-Ming Hu, Liwei Lin

研究成果: Article同行評審

18 引文 斯高帕斯(Scopus)

摘要

Drain current of AlGaN/GaN high electron mobility transistors (HEMTs) is measured to decrease/increase with in-plane tensile/compressive external strain. Such a trend is opposite to the conventional theory of direct piezoelectric effect on 2-D electron gas (2DEG). The reason is found to be the dependence of nickel gate barrier height on external strain, which strongly affects HEMTs' threshold voltage and 2DEG concentration. The Ni/AlGaN interface states are proposed to be responsible for strain-induced gate barrier variations, which are important for device performances and sensor applications.

原文English
文章編號7156076
頁(從 - 到)902-904
頁數3
期刊IEEE Electron Device Letters
36
發行號9
DOIs
出版狀態Published - 1 九月 2015

指紋 深入研究「Piezoelectricity-induced schottky barrier height variations in AlGaN/GaN high electron mobility transistors」主題。共同形成了獨特的指紋。

引用此