Piezoelectric field-induced quantum-confined stark effect in InGaN/GaN multiple quantum wells

C. Y. Lai*, T. M. Hsu, Wen-Hao Chang, K. U. Tseng, C. M. Lee, C. C. Chuo, J. I. Chyi

*Corresponding author for this work

研究成果: Article同行評審

9 引文 斯高帕斯(Scopus)

摘要

In this paper, we present an experimental evidence for the piezoelectric field-induced quantum-confined Stark effect (QCSE) on InGaN/GaN quantum wells. The optical transitions of In0.23Ga0.77N/GaN p-i-n MQWs were studied by using modulation spectroscopy (electrotransmission ET) at room temperature. Quantum-well-related signals are well resolved in our ET spectra. Clear energy blue shifts in accordance with increasing reversed bias are observed in the ET spectra. The energy blue shift is attributed to the QCSE. The strength of piezoelectric field is found to be 1.9 MV/cm. We also show experimentally how the piezoelectric field affects the energy shift in the strained MQWs.

原文English
頁(從 - 到)77-80
頁數4
期刊Physica Status Solidi (B) Basic Research
228
發行號1
DOIs
出版狀態Published - 十一月 2001

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