Physics and modeling of Ge-on-Insulator MOSFETs

Albert Chin*, H. L. Kao, Y. Y. Tseng, D. S. Yu, C. C. Chen, S. P. McAlister, C. C. Chi

*Corresponding author for this work

研究成果: Conference contribution

14 引文 斯高帕斯(Scopus)

摘要

We have used process and device simulation tools (TSupreme and Medici) to analyze the measured DC characteristics of Ge-on-Insulator (GOI) MOSFETs. The GOI devices have higher drive current than do their Si counterparts, due to the smaller effective mass (m*) and smaller Ge energy bandgap - however this also causes a larger off-state Ids leakage current. The simulations predict that the GOI MOSFETs have better RF gain and noise performance compared with Si devices. This is important for high speed operation as down-scaling continues.

原文English
主出版物標題Proceedings of ESSDERC 2005
主出版物子標題35th European Solid-State Device Research Conference
頁面285-288
頁數4
DOIs
出版狀態Published - 1 十二月 2005
事件ESSDERC 2005: 35th European Solid-State Device Research Conference - Grenoble, France
持續時間: 12 九月 200516 九月 2005

出版系列

名字Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference
2005

Conference

ConferenceESSDERC 2005: 35th European Solid-State Device Research Conference
國家France
城市Grenoble
期間12/09/0516/09/05

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    Chin, A., Kao, H. L., Tseng, Y. Y., Yu, D. S., Chen, C. C., McAlister, S. P., & Chi, C. C. (2005). Physics and modeling of Ge-on-Insulator MOSFETs. 於 Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference (頁 285-288). [1546641] (Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference; 卷 2005). https://doi.org/10.1109/ESSDER.2005.1546641