TY - JOUR
T1 - Physical properties of InGaO3(ZnO)m with various content ratio grown by PAMBE
AU - Yang, Chu Shou
AU - Huang, Shin Jung
AU - Kao, Yu Chung
AU - Chen, Guan He
AU - Chou, Wu-Ching
PY - 2015/7/28
Y1 - 2015/7/28
N2 - The quaternary compound semiconductor (InGaO3(ZnO)m); m=1,2,3...)(IGZO) thin films were fabricated by plasma-assisted molecular beam epitaxy. First, the IGZO thin films were grown under the variation of gallium cell temperature to evaluate the fundamental properties of IGZO. A phase transformation between crystalline and amorphous is observed when the gallium content ratio is higher than 28 at%. It revealed redundancy in the metal, which would self-assist the channel or defect state to destroy the crystal structure. The highest mobility of 74.3 cm2/V s was obtained at 28 at% of gallium. By tuning the element content of quaternary compounds, the ternary plots distribution of IGZO thin films exhibits an amorphous structure in most regions. Therefore, the stoichiometric condition of IGZO, which is 1:1:1:4, is demonstrated at the amorphous structure. Additionally, it transitions to crystalline structure after a 1100 °C annealing process.
AB - The quaternary compound semiconductor (InGaO3(ZnO)m); m=1,2,3...)(IGZO) thin films were fabricated by plasma-assisted molecular beam epitaxy. First, the IGZO thin films were grown under the variation of gallium cell temperature to evaluate the fundamental properties of IGZO. A phase transformation between crystalline and amorphous is observed when the gallium content ratio is higher than 28 at%. It revealed redundancy in the metal, which would self-assist the channel or defect state to destroy the crystal structure. The highest mobility of 74.3 cm2/V s was obtained at 28 at% of gallium. By tuning the element content of quaternary compounds, the ternary plots distribution of IGZO thin films exhibits an amorphous structure in most regions. Therefore, the stoichiometric condition of IGZO, which is 1:1:1:4, is demonstrated at the amorphous structure. Additionally, it transitions to crystalline structure after a 1100 °C annealing process.
KW - A3. Molecular beam epitaxy
KW - IGZO
UR - http://www.scopus.com/inward/record.url?scp=84979960646&partnerID=8YFLogxK
U2 - 10.1016/j.jcrysgro.2015.02.054
DO - 10.1016/j.jcrysgro.2015.02.054
M3 - Article
AN - SCOPUS:84979960646
VL - 425
SP - 258
EP - 261
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
ER -