Physical Properties of electrooptical GaSe:Al

S. A. Ku, Chih-Wei Luo, W. C. Chu, Yu M. Andreev, V. V. Atuchin, G. V. Lanskii, A. N. Morozov, A. V. Shaiduko, V. V. Zuev

研究成果: Conference contribution同行評審

摘要

Physical properties of Al-doped GaSe or GaSe:Al(0.01, 0.02, 0.05, 0.1, 0.5, 1, 2 wt%) crystals in charge composition were studied in comparison with pure GaSe to reveal the potentials for sub- and microwave electrooptical application. Aluminium was not detected in GaSe:Al by X-ray chemical analysis. It was found that resistivity of GaSe:Al drastically increases with Al doping up to 10 5-107 Omcm in comparison with (1-3)•102 Om•cm in pure GaSe and 103 Om•cm in GaSe:S(2 wt%). No significant changes in optical properties to that in GaSe (→≤0.1-0.2 cm-1) were found at 0.01-0.02 wt% Al-doping but 2-fold to 3-fold increase in hardness at 0.5 wt% Al-doping. GaSe physical properties modified by Al-doping make it very attractive for mid-IR and sub-microwave electrooptic applications.

原文English
主出版物標題Proceedings - 2010 IEEE Region 8 International Conference on Computational Technologies in Electrical and Electronics Engineering, SIBIRCON-2010
頁面581-583
頁數3
DOIs
出版狀態Published - 6 十月 2010
事件2010 IEEE Region 8 International Conference on Computational Technologies in Electrical and Electronics Engineering, SIBIRCON-2010 - Irkutsk Listvyanka, Russian Federation
持續時間: 11 七月 201015 七月 2010

出版系列

名字Proceedings - 2010 IEEE Region 8 International Conference on Computational Technologies in Electrical and Electronics Engineering, SIBIRCON-2010

Conference

Conference2010 IEEE Region 8 International Conference on Computational Technologies in Electrical and Electronics Engineering, SIBIRCON-2010
國家Russian Federation
城市Irkutsk Listvyanka
期間11/07/1015/07/10

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