Photon-Detection-Probability Simulation Method for CMOS Single-Photon Avalanche Diodes

Chin An Hsieh, Chia Ming Tsai, Bing Yue Tsui, Bo Jen Hsiao, Sheng Di Lin*

*Corresponding author for this work

研究成果: Article同行評審

摘要

Single-photon avalanche diodes (SPADs) in complementary metal-oxide-semiconductor (CMOS) technology have excellent timing resolution and are capable to detect single photons. The most important indicator for its sensitivity, photon-detection probability (PDP), defines the probability of a successful detection for a single incident photon. To optimize PDP is a cost-and time-consuming task due to the complicated and expensive CMOS process. In this work, we have developed a simulation procedure to predict the PDP without any fitting parameter. With the given process parameters, our method combines the process, the electrical, and the optical simulations in commercially available software and the calculation of breakdown trigger probability. The simulation results have been compared with the experimental data conducted in an 800-nm CMOS technology and obtained a good consistence at the wavelength longer than 600 nm. The possible reasons for the disagreement at the short wavelength have been discussed. Our work provides an effective way to optimize the PDP of a SPAD prior to its fabrication.

原文English
文章編號436
期刊Sensors (Switzerland)
20
發行號2
DOIs
出版狀態Published - 13 一月 2020

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