Photoluminescence and time-resolved carrier dynamics in thiol-capped CdTe nanocrystals under high pressure

Yan Cheng Lin*, Wu-Ching Chou, Andrei S. Susha, Stephen V. Kershaw, Andrey L. Rogach

*Corresponding author for this work

研究成果: Article同行評審

13 引文 斯高帕斯(Scopus)

摘要

The application of static high pressure provides a method for precisely controlling and investigating many fundamental and unique properties of semiconductor nanocrystals (NCs). This study systematically investigates the high-pressure photoluminescence (PL) and time-resolved carrier dynamics of thiol-capped CdTe NCs of different sizes, at different concentrations, and in various stress environments. The zincblende-to-rocksalt phase transition in thiol-capped CdTe NCs is observed at a pressure far in excess of the bulk phase transition pressure. Additionally, the process of transformation depends strongly on NC size, and the phase transition pressure increases with NC size. These peculiar phenomena are attributed to the distinctive bonding of thiols to the NC surface. In a nonhydrostatic environment, considerable flattening of the PL energy of CdTe NC powder is observed above 3.0 GPa. Furthermore, asymmetric and double-peak PL emissions are obtained from a concentrated solution of CdTe NCs under hydrostatic pressure, implying the feasibility of pressure-induced interparticle coupling.

原文English
頁(從 - 到)3400-3405
頁數6
期刊Nanoscale
5
發行號8
DOIs
出版狀態Published - 21 四月 2013

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