Phenomenological compact model for QM charge centroid in multigate FETs

Sriramkumar Venugopalan*, Muhammed A. Karim, Sayeef Salahuddin, Ali M. Niknejad, Chen-Ming Hu

*Corresponding author for this work

研究成果: Article同行評審

15 引文 斯高帕斯(Scopus)

摘要

We present a phenomenological compact model of the inversion charge centroid considering both the structural and electrical confinements in multigate FETs. The developed new model shows a good match with Technology-CAD (TCAD) data for both physical parameters such as fin thickness in FinFET and wire radius in cylindrical FET, channel doping, and electrical bias variation. With the introduction of fitting parameters, the model is capable of handling hole and electron carriers, various channel materials, and process variations, such as fin shape, etc.

原文English
文章編號6482675
頁(從 - 到)1480-1484
頁數5
期刊IEEE Transactions on Electron Devices
60
發行號4
DOIs
出版狀態Published - 3 四月 2013

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