Performance of InGaN light-emitting diodes fabricated on patterned sapphire substrates with modified top-tip cone shapes

Hsu Hung Hsueh, Sin Liang Ou, Chiao Yang Cheng, Dong Sing Wuu, Ray-Hua Horng*

*Corresponding author for this work

研究成果: Article同行評審

3 引文 斯高帕斯(Scopus)

摘要

InGaN light-emitting diodes (LEDs) were fabricated on cone-shaped patterned sapphire substrates (PSSs) by using low-pressure metalorganic chemical vapor deposition. To enhance the crystal quality of the GaN epilayer and the optoelectronic performance of the LED device, the top-tip cone shapes of the PSSs were further modified using wet etching. Through the wet etching treatment, some dry-etched induced damage on the substrate surface formed in the PSS fabrication process can be removed to achieve a high epilayer quality. In comparison to the LEDs prepared on the conventional sapphire substrate (CSS) and cone-shaped PSS without wet etching, the LED grown on the cone-shaped PSS by performing wet etching for 3 min exhibited 55% and 10% improvements in the light output power (at 350 mA), respectively. This implies that the modification of cone-shaped PSSs possesses high potential for LED applications.

原文English
文章編號796253
期刊International Journal of Photoenergy
2014
DOIs
出版狀態Published - 1 一月 2014

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