Performance improvement of pentacene-based organic thin-film transistor with HfO 2 gate dielectrics treated by CF 4 plasma

Kow-Ming Chang*, Sung Hung Huang, Yi Wen Tseng

*Corresponding author for this work

研究成果: Conference contribution同行評審

4 引文 斯高帕斯(Scopus)

摘要

Fluorine incorporation into the HfO 2 gate dielectrics by post CF 4 plasma treatment in an inductively coupled plasma chamber was proposed to improve gate leakage current and modify surface property for low-temperature fabrication. During the whole process, the temperature is controlled below 150°C. The low-leakage HfO 2 dielectric treated by CF 4 plasma was characterized and then utilized in pentacene-based OTFTs. After CF 4 plasma treatment, the gate leakage and field effect mobility were effectively improved. By integrating high-k HfO 2 by CF 4 plasma treatment and HMDS evaporation treatment, a low operating voltage (-4V), low threshold voltage (-1.12V), a low subthreshold swing (266 mV/decade), a field-effect mobility (0.029cm 2/Vs) and an on/off current ratio (>10 4) were obtained.

原文English
主出版物標題Organic Semiconductor Materials, Devices, and Processing 3
頁面1-9
頁數9
版本19
DOIs
出版狀態Published - 1 十二月 2011
事件Organic Semiconductor Materials, Devices, and Processing 3 - 219th ECS Meeting - Montreal, QC, Canada
持續時間: 1 五月 20116 五月 2011

出版系列

名字ECS Transactions
號碼19
35
ISSN(列印)1938-5862
ISSN(電子)1938-6737

Conference

ConferenceOrganic Semiconductor Materials, Devices, and Processing 3 - 219th ECS Meeting
國家Canada
城市Montreal, QC
期間1/05/116/05/11

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