Performance improvement for high mobility amorphous indium-zinc-tin-oxide thin-film transistors

Chur Shyang Fuh, Po-Tsun Liu*, Yang Shun Fan, Chih Hsiang Chang, Che Chia Chang

*Corresponding author for this work

研究成果: Article

1 引文 斯高帕斯(Scopus)

摘要

In this work, the relation between post annealing temperature and electrical characteristic on high mobility a-IZTO TFTs was investigated. The 400°C-annealed a-IZTO TFTs exhibited a better performance with field effect mobility of 39.6 cm 2 /Vs, V th of -2.8 V and sub-threshold swing of 0.25 V/decade. Both shallow trap states of a-IZTO film and interface trap states at the a-IZTO/SiO 2 interface decreased to 2.16 × 10 17 cm -3 eV -1 and 4.38 × 10 12 cm -2 eV -1 , respectively with 400°C annealing. Owing to the higher energy from annealing process, the structural relaxation can be enhanced leading a better electrical characteristic of a-IZTO TFTs.

原文English
頁(從 - 到)1017-1020
頁數4
期刊Digest of Technical Papers - SID International Symposium
45
發行號1
DOIs
出版狀態Published - 1 一月 2014

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