@inproceedings{eb72a1558dea48bb9f3b33d7d44641ab,
title = "Performance enhancement of Pt/ZnO/Pt resistive random access memory (RRAM) with UV-Ozone treatment",
abstract = "The bipolar resistive switching characteristics of the Pt/ZnO/Pt resistive random access memory (RRAM) had been investigated. This work introduced UV-Ozone treatment to improve the interface quality between ZnO thin film and Pt electrode. We found that UV-Oznoe can help to clean the surface of Pt electrode and provide superior surface morphology for the subsequent sputtering ZnO thin film deposition. According the experiment result, the Pt/ZnO/Pt RRAM demonstrated better on-off current ratio and the excellent retention time after UV-Ozone treatment.",
author = "Chen, {Der Long} and Hsin-Chieh Yu and Yang, {Chih Chiang} and Su, {Yan Kuin} and Chou, {Cheng Wei} and Ruan, {Jian Long}",
year = "2016",
month = aug,
day = "15",
doi = "10.1109/AM-FPD.2016.7543670",
language = "English",
series = "Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "213--214",
booktitle = "Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices",
address = "United States",
note = "null ; Conference date: 06-07-2016 Through 08-07-2016",
}