Performance enhancement of Pt/ZnO/Pt resistive random access memory (RRAM) with UV-Ozone treatment

Der Long Chen, Hsin-Chieh Yu, Chih Chiang Yang, Yan Kuin Su, Cheng Wei Chou, Jian Long Ruan

研究成果: Conference contribution同行評審

1 引文 斯高帕斯(Scopus)

摘要

The bipolar resistive switching characteristics of the Pt/ZnO/Pt resistive random access memory (RRAM) had been investigated. This work introduced UV-Ozone treatment to improve the interface quality between ZnO thin film and Pt electrode. We found that UV-Oznoe can help to clean the surface of Pt electrode and provide superior surface morphology for the subsequent sputtering ZnO thin film deposition. According the experiment result, the Pt/ZnO/Pt RRAM demonstrated better on-off current ratio and the excellent retention time after UV-Ozone treatment.

原文English
主出版物標題Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices
主出版物子標題TFT Technologies and FPD Materials
發行者Institute of Electrical and Electronics Engineers Inc.
頁面213-214
頁數2
ISBN(電子)9784990875312
DOIs
出版狀態Published - 15 八月 2016
事件23rd International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2016 - Kyoto, Japan
持續時間: 6 七月 20168 七月 2016

出版系列

名字Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials

Conference

Conference23rd International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2016
國家Japan
城市Kyoto
期間6/07/168/07/16

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