Performance and reliability of low-temperature polysilicon TFT with a novel stack gate dielectric and stack optimization using PECVD nitrous oxide plasma

Kow-Ming Chang*, Wen Chih Yang, Chiu Pao Tsai

*Corresponding author for this work

研究成果: Article同行評審

10 引文 斯高帕斯(Scopus)

摘要

This paper proposes a novel tetraethylorthosilicate (TEOS)/oxynitride stack gate dielectric for low-temperature poly-Si thin-film transistors, composed of a plasma-enhanced chemical vapor deposition (PECVD) thick TEOS oxide/ultrathin oxynitride grown by PECVD N2O plasma. The novel stack gate dielectric exhibits a very high electrical breakdown field of 8.5 MV/cm, which is approximately 3 MV/cm higher than traditional PECVD TEOS oxide. The novel stack oxide also has better interface quality, lower bulk-trap density, and higher long-term reliability than PECVD TEOS dielectrics. These improvements are attributed to the formation of strong Si ≡ N bonds of high quality ultra-thin oxynitride grown by PECVD N2O plasma, and the reduction in the trap density at the oxynitride/poly-Si interface.

原文English
頁(從 - 到)63-67
頁數5
期刊IEEE Transactions on Electron Devices
51
發行號1
DOIs
出版狀態Published - 1 一月 2004

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