Pentacene-based thin-film transistors with multiwalled carbon nanotube source and drain electrodes

Chia Hao Chang*, Chao-Hsin Chien, Jung Yen Yang

*Corresponding author for this work

研究成果: Article同行評審

29 引文 斯高帕斯(Scopus)

摘要

In this letter, the authors propose a practical and reliable approach-using deposited multiwalled carbon nanotubes (MWCNTs) as source and drain electrodes-for reducing the contact resistance (Rc) in pentacene-based bottom-contact thin-film transistors. The value of Rc of the devices was closely linked to the resultant length of the deposited MWCNTs; the lowest value was 3× 108 μm. The largest saturation mobility was 0.14 cm2 V s; this value reached up to three times higher when the threshold voltage was determined using the maximum transconductance (Gm,max) extrapolation method, rather than the constant current method. The on/off ratio was more than 106.

原文English
文章編號083502
期刊Applied Physics Letters
91
發行號8
DOIs
出版狀態Published - 31 八月 2007

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