Partial ordering and enhanced mobility in Ga 0.47 In 0.53 As grown on vicinal (110)InP

Albert Chin*, T. Y. Chang, A. Ourmazd, E. M. Monberg

*Corresponding author for this work

研究成果: Article

18 引文 斯高帕斯(Scopus)

摘要

Very high quality GaInAs/AlInAs modulation-doped heterostructures have been obtained by molecular beam epitaxy on InP oriented 6°off (110) towards the (111̄) pole. The results indicate partial ordering in the epitaxial layers and also suggest reduced background acceptor concentration. In spite of the high density of interface steps, the electron mobility obtained on the vicinal (110) substrate exceeds the state-of-the-art value obtained on (100) oriented substrates.

原文English
頁(從 - 到)968-970
頁數3
期刊Applied Physics Letters
58
發行號9
DOIs
出版狀態Published - 1 十二月 1991

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