Oxygen plasma functioning of charge carrier density in zinc oxide thin-film transistors

Min Ching Chu, Jagan Singh Meena*, Po-Tsun Liu, Han Ping D. Shieh, Hsin Chiang You, Yen Wei Tu, Feng Chih Chang, Fu-Hsiang Ko

*Corresponding author for this work

研究成果: Article同行評審

16 引文 斯高帕斯(Scopus)

摘要

A change in the charge carrier density of zinc oxide (ZnO) films for control the functioning of thin-film transistors (TFTs) has been studied by oxygen (O2) plasma techniques. This effect was interpreted in terms of a threshold voltage shift and the variation in carrier mobility. The plasmasurface interaction on the molecular level and the behavioral characterization of ZnO films were investigated by X-ray photospectroscopy of the O 1s region. This process was highly sensitive at low level variations in defect and doping density. O2 plasma treatment leads to a shift of turn-on voltage and a reduction of the off-current by more than two orders of magnitude in ZnO-TFTs.

原文English
文章編號076501
期刊Applied Physics Express
6
發行號7
DOIs
出版狀態Published - 七月 2013

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