Oxygen plasma functioning of charge carrier density in zinc oxide thin-film transistors

Min Ching Chu; Jagan Singh Meena; Po-Tsun Liu; Han Ping D. Shieh; Hsin Chiang You; Yen Wei Tu; Feng Chih Chang; Fu-Hsiang Ko

doi:10.7567/APEX.6.076501

Oxygen plasma functioning of charge carrier density in zinc oxide thin-film transistors

Min Ching Chu, Jagan Singh Meena^*, Po-Tsun Liu, Han Ping D. Shieh, Hsin Chiang You, Yen Wei Tu, Feng Chih Chang, Fu-Hsiang Ko

^*Corresponding author for this work

研究成果: Article › 同行評審

16 引文斯高帕斯（Scopus）

摘要

A change in the charge carrier density of zinc oxide (ZnO) films for control the functioning of thin-film transistors (TFTs) has been studied by oxygen (O₂) plasma techniques. This effect was interpreted in terms of a threshold voltage shift and the variation in carrier mobility. The plasmasurface interaction on the molecular level and the behavioral characterization of ZnO films were investigated by X-ray photospectroscopy of the O 1s region. This process was highly sensitive at low level variations in defect and doping density. O₂ plasma treatment leads to a shift of turn-on voltage and a reduction of the off-current by more than two orders of magnitude in ZnO-TFTs.

原文	English
文章編號	076501
期刊	Applied Physics Express
卷	6
發行號	7
DOIs	https://doi.org/10.7567/APEX.6.076501
出版狀態	Published - 七月 2013

存取文件

10.7567/APEX.6.076501

指紋深入研究「Oxygen plasma functioning of charge carrier density in zinc oxide thin-film transistors」主題。共同形成了獨特的指紋。

引用此

@article{84e4b777cc64413ba10fabc47e8393fa,

title = "Oxygen plasma functioning of charge carrier density in zinc oxide thin-film transistors",

abstract = "A change in the charge carrier density of zinc oxide (ZnO) films for control the functioning of thin-film transistors (TFTs) has been studied by oxygen (O2) plasma techniques. This effect was interpreted in terms of a threshold voltage shift and the variation in carrier mobility. The plasmasurface interaction on the molecular level and the behavioral characterization of ZnO films were investigated by X-ray photospectroscopy of the O 1s region. This process was highly sensitive at low level variations in defect and doping density. O2 plasma treatment leads to a shift of turn-on voltage and a reduction of the off-current by more than two orders of magnitude in ZnO-TFTs.",

author = "Chu, {Min Ching} and Meena, {Jagan Singh} and Po-Tsun Liu and {D. Shieh}, {Han Ping} and You, {Hsin Chiang} and Tu, {Yen Wei} and Chang, {Feng Chih} and Fu-Hsiang Ko",

year = "2013",

month = jul,

doi = "10.7567/APEX.6.076501",

language = "English",

volume = "6",

journal = "Applied Physics Express",

issn = "1882-0778",

publisher = "Japan Society of Applied Physics",

number = "7",

}

TY - JOUR

T1 - Oxygen plasma functioning of charge carrier density in zinc oxide thin-film transistors

AU - Chu, Min Ching

AU - Meena, Jagan Singh

AU - Liu, Po-Tsun

AU - D. Shieh, Han Ping

AU - You, Hsin Chiang

AU - Tu, Yen Wei

AU - Chang, Feng Chih

AU - Ko, Fu-Hsiang

PY - 2013/7

Y1 - 2013/7

N2 - A change in the charge carrier density of zinc oxide (ZnO) films for control the functioning of thin-film transistors (TFTs) has been studied by oxygen (O2) plasma techniques. This effect was interpreted in terms of a threshold voltage shift and the variation in carrier mobility. The plasmasurface interaction on the molecular level and the behavioral characterization of ZnO films were investigated by X-ray photospectroscopy of the O 1s region. This process was highly sensitive at low level variations in defect and doping density. O2 plasma treatment leads to a shift of turn-on voltage and a reduction of the off-current by more than two orders of magnitude in ZnO-TFTs.

AB - A change in the charge carrier density of zinc oxide (ZnO) films for control the functioning of thin-film transistors (TFTs) has been studied by oxygen (O2) plasma techniques. This effect was interpreted in terms of a threshold voltage shift and the variation in carrier mobility. The plasmasurface interaction on the molecular level and the behavioral characterization of ZnO films were investigated by X-ray photospectroscopy of the O 1s region. This process was highly sensitive at low level variations in defect and doping density. O2 plasma treatment leads to a shift of turn-on voltage and a reduction of the off-current by more than two orders of magnitude in ZnO-TFTs.

UR - http://www.scopus.com/inward/record.url?scp=84880851548&partnerID=8YFLogxK

U2 - 10.7567/APEX.6.076501

DO - 10.7567/APEX.6.076501

M3 - Article

AN - SCOPUS:84880851548

VL - 6

JO - Applied Physics Express

JF - Applied Physics Express

SN - 1882-0778

IS - 7

M1 - 076501

ER -