Origin of hopping conduction in graphene-oxide-doped silicon oxide resistance random access memory devices

Kuan Chang Chang, Rui Zhang, Ting Chang Chang, Tsung Ming Tsai, J. C. Lou, Jung Hui Chen, Tai Fa Young, Min Chen Chen, Ya Liang Yang, Yin Chih Pan, Geng Wei Chang, Tian Jian Chu, Chih Cheng Shih, Jian Yu Chen, Chih Hung Pan, Yu Ting Su, Yong En Syu, Ya-Hsiang Tai, Simon M. Sze

研究成果: Article同行評審

50 引文 斯高帕斯(Scopus)

摘要

In this letter, a double-active-layer (Zr:SiO x C:SiO x ) resistive switching memory device with a high on/off resistance ratio and small working current (0.02 mA), is presented. Through the analysis of Raman and Fourier transform infrared spectroscopy spectra, we find that graphene oxide exists in the C:SiO x layer. It can be observed that Zr:SiO x C:SiO x structure has superior switching performance and higher stability compared with the single-active-layer (Zr:SiO x ) structure, which is attributed to the existence of graphene oxide flakes formed during the sputter process. I-V characteristics under a series of increasing temperature were analyzed to testify the carrier hopping distance variation, which is further verified by our graphene oxide redox reaction model.

原文English
文章編號6488720
頁(從 - 到)677-679
頁數3
期刊IEEE Electron Device Letters
34
發行號5
DOIs
出版狀態Published - 1 四月 2013

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