Organic thin-film transistors with AIN film as a gate-insulator by RFIICF sputtering

Kuo Hsi Yen*, Hsiao-Wen Zan, Chueh Ping Ko, Pu Kuan Liu, Tzu Yueh Chang, Kuo Hai Su, Chiung Sheng Wei, Po-Tsung Lee, Chien Hsun Chen, Chun Ming Yeh, Jennchang Hwang

*Corresponding author for this work

研究成果: Conference article同行評審

1 引文 斯高帕斯(Scopus)

摘要

We firstly fabricated the organic thin-film transistors with sputtered-AIN film as the gate insulator. The AIN film was deposited by the RF-ICP (Induced Couple Plasma) sputtering. The demonstrated pentacene based TFTs had on/off current ratio around 4 and mobility around 5×10-4 cm 2/Vs without any surface treatment and pentacene purification. All optimized conditions for this new proposed device were under processing.

原文English
頁(從 - 到)56-58
頁數3
期刊SID Conference Record of the International Display Research Conference
2005
出版狀態Published - 1 十二月 2005
事件25th Internatioanl Display Research Conference, EURODISPLAY 2005 - Edinburgh, SCO, United Kingdom
持續時間: 20 九月 200522 九月 2005

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