Organic photo transistors with drain bias modulation effect

Hsiao-Wen Zan*, Shih Chin Kao

*Corresponding author for this work

研究成果: Conference article同行評審

摘要

In this paper, the influence of light induced electrons on the threshold voltage shift of organic thin film transistors (OTFTs) was studied. The light induced electrons are formed and accumulated in the channel near the interface of gate dielectric. The light source can be used as second source. Therefore, the study demonstrates the light induced electrons in channel can be affected by drain bias like bias stress. The decreasing accumulated electrons with increasing positive drain bias lower the threshold voltage shift rate during illumination time. The opposite trend can be observed when using negative drain increases accumulated electrons. This result is helpful to adjust the photosensivity of organic photo transistors.

原文English
頁(從 - 到)275-277
頁數3
期刊SID Conference Record of the International Display Research Conference
出版狀態Published - 1 十二月 2008
事件28th International Display Research Conference, IDRC'08 - Orlando, FL, United States
持續時間: 4 十一月 20086 十一月 2008

指紋 深入研究「Organic photo transistors with drain bias modulation effect」主題。共同形成了獨特的指紋。

引用此