Optimum power-saving method for power MOSFET width of DC-DC converters

Ke-Horng Chen*, C. C. Chien, C. H. Hsu, L. R. Huang

*Corresponding author for this work

研究成果: Article同行評審

29 引文 斯高帕斯(Scopus)

摘要

An optimum power metal-oxide-semiconductor field effect transistor (MOSFET) width technique is proposed for enhancing the efficiency characteristics of switching DC-DC converters. By implementing a one-cycle buck DC-DC converter, it is demonstrated that the dynamic power MOSFET width controlling technique has a much improved power reduction whether the load current is light or heavy. The maximum efficiency of the buck converter is ∼92 with a 3 efficiency improvement for the heavy load condition. The efficiency is further improved by ∼16 for the light load condition as a result of the power reduction from the large power MOSFET transistors. Also proposed is a new error-correction loop circuit to enable a better load regulation than that of previous designs. Compared with the adaptive gate driver voltage technique, the optimum power MOSFET width can achieve a significant improvement in power saving. It is also superior to the low-voltage-swing MOSFET gate drive technique for switching DC-DC converters.

原文English
頁(從 - 到)57-62
頁數6
期刊IET Circuits, Devices and Systems
1
發行號1
DOIs
出版狀態Published - 19 四月 2007

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