Optimum design of InGaP/GaAs/Ge triple-junction solar cells with sub-wavelength surface texture structure

Pei Hsuan Huang*, Hsun Wen Wang, Min An Tsai, Fang I. Lai, Shou Yi Kuo, Hao-Chung Kuo, Sien Chi

*Corresponding author for this work

研究成果: Conference contribution

摘要

In this study, we design the InGaP/GaAs/Ge triple-junction solar cells by optimizing short-circuit current matching between top and middle cells using Crosslight APSYS software. The base thickness of top InGaP cell is optimized at 0.36 um and the base thickness of middle GaAs cell is optimized at 3.2 um under AM1.5G illumination. For the optimized solar cell with nanorod arrays surface texture structure, the maximum I sc is 13.512 mA/cm 2, the open-circuit voltage (V oc) is 2.614 V, and the conversion efficiency (η) is 30.686 %. The enhancement of the I sc and the efficiency were 13.68 % and 12.24 %.

原文English
主出版物標題Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011
頁面2071-2073
頁數3
DOIs
出版狀態Published - 1 十二月 2011
事件37th IEEE Photovoltaic Specialists Conference, PVSC 2011 - Seattle, WA, United States
持續時間: 19 六月 201124 六月 2011

出版系列

名字Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN(列印)0160-8371

Conference

Conference37th IEEE Photovoltaic Specialists Conference, PVSC 2011
國家United States
城市Seattle, WA
期間19/06/1124/06/11

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