Optimization of broadband RF performance and ESD robustness by π-model distributed ESD protection scheme

Ming-Dou Ker*, Bing Jye Kuo, Yuan Wen Hsiao

*Corresponding author for this work

研究成果: Article同行評審

15 引文 斯高帕斯(Scopus)

摘要

Large electrostatic discharge (ESD) protection devices close to the I/O pins, beneficial for ESD protection, have an adverse effect on the performance of broadband radio-frequency (RF) circuits for impedance mismatch and bandwidth degradation. A new proposed ESD protection structure, π-model distributed ESD (π-DESD) protection circuit, composed of one pair of ESD devices near the I/O pin, the other pair close to the core circuit, and a coplanar waveguide with under-grounded shield (CPWG) connecting these two pairs, can successfully achieve both excellent ESD robustness and good broadband RF performance. Cooperating with the active power-rail ESD clamp circuit, the experimental chip in a 0.25-μm CMOS process can sustain the human-body-model (HBM) ESD stress of 8 kV.

原文English
頁(從 - 到)80-87
頁數8
期刊Journal of Electrostatics
64
發行號2
DOIs
出版狀態Published - 1 二月 2006

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