Optimal design of Ge-dot photoMOSFETs for highly-integrated monolithic Si photonics

Ming Hao Kuo, Meng Chun Lee, Che Wei Tien, Wei Ting Lai, Pei-Wen Li*

*Corresponding author for this work

研究成果: Conference contribution同行評審

摘要

Ge-dot/SiO2/SiGe-channel photoMOSFETs are demonstrated on Si substrate. A decrease in the dot size and gate oxide thickness significantly enhances the photoresponsivity (9000A/W) with 6nW under 850nm illumination, and improves response time (0.48ns) and power consumption.

原文English
主出版物標題2017 Optical Fiber Communications Conference and Exhibition, OFC 2017 - Proceedings
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9781943580231
DOIs
出版狀態Published - 31 五月 2017
事件2017 Optical Fiber Communications Conference and Exhibition, OFC 2017 - Los Angeles, United States
持續時間: 19 三月 201723 三月 2017

出版系列

名字2017 Optical Fiber Communications Conference and Exhibition, OFC 2017 - Proceedings

Conference

Conference2017 Optical Fiber Communications Conference and Exhibition, OFC 2017
國家United States
城市Los Angeles
期間19/03/1723/03/17

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